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IGBT with Diode
Combi Pack Short Circuit SOA Capability
IXSN 52N60AU1 VCES
IC25 VCE(sat)
3 2
= 600 V = 80 A = 3V
4
1
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125C RG = 22 W, non repetitive TC = 25C 50/60 Hz IISOL 1 mA t = 1 min t=1s
Maximum Ratings 600 600 20 30 80 40 160 ICM = 80 @ 0.8 VCES 10 250 2500 3000 -55 ... +150 150 -55 ... +150 V A V V A A A A ms W V~ V~ C C C
miniBLOC, SOT-227 B
1 2
4 3 1 = Emitter , 2 = Gate, 3 = Collector 4 = Emitter
Either Emitter terminal can be used as Main or Kelvin Emitter
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Features * International standard package miniBLOC * Aluminium-nitride isolation - high power dissipation * Isolation voltage 3000 V~ * Low VCE(sat) - for minimum on-state conduction losses * Fast Recovery Epitaxial Diode - short trr and IRM * Low collector-to-case capacitance (< 50 pF) - reducesd RFI * Low package inductance (< 10 nH) - easy to drive and to protect Applications * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies Advantages * Space savings * Easy to mount with 2 screws * High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 8 750 15 100 3 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 3 mA, VGE = 0 V = 4 mA, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
92814H(5/97)
(c) 2000 IXYS All rights reserved
1-5
IXSN52N60AU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 23 4500 VCE = 25 V, VGE = 0 V, f = 1 MHz 400 90 190 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 45 88 70 220 200 200 3.5 70 220 4.7 450 340 6 600 250 60 120 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.50 K/W 0.05 K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle d 2 %
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.8 19 175 35 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 360 V TJ = 125C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25C
50
0.80 K/W
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5
IXSN52N60AU1
Fig.1 Saturation Characteristics
80
TJ = 25C VGE = 15V 13V
Fig.2 Output Characterstics
200 180 160 140 120 100 80 60 40 20 0 5 0 2 4 6 8
9V 7V 11V TJ = 25C VGE = 15V
70 60
IC - Amperes
50 40 30 20 10
9V 7V
0
0
1
2
3
4
IC - Amperes
11V
13V
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
TJ = 25C
Fig.4 Temperature Dependence of Output Saturation Voltage
1.5 1.4
VGE=15V
IC = 80A
VCE(sat) - Normalized
1.3 1.2 1.1 1.0 0.9
IC = 20A IC = 40A
VCE - Volts
6 5 4 3 2 1 0 8 9 10 11 12 13 14 15
IC = 20A IC = 40A IC = 80A
0.8 0.7 -50 -25 0 25 50 75 100 125 150
VGE - Volts
TJ - Degrees C
Fig.5 Input Admittance
80
VCE = 10V
Fig.6 Temperature Dependence of Breakdown and Threshold Voltage
1.3
BV / VGE(th) - Normalized
70 60
1.2 1.1 1.0 0.9 0.8 0.7 -50
BVCES IC = 3mA
IC - Amperes
50 40 30 20 10 0
TJ = 125C TJ = - 40C TJ = 25C
VGE8th) IC = 4mA
4
5
6
7
8
9
10
11
12
13
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-5
IXSN52N60AU1
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
1000
TJ = 125C RG = 10W
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
12 1000
TJ = 125C
10
IC = 52A Eoff
tfi - nanoseconds
tfi - nanoseconds
750
Eoff
9
800
8 6 4 2 0 50
Eoff - millijoules
600 400 200 0
500
tfi
6
tfi
250
3
0
0
10
20
30
40
50
60
70
0 80
0
10
20
30
40
IC - Amperes
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15
IC = 52A
Fig.10 Turn-Off Safe Operating Area
1000
12
VCE = 480V
100
IC - Amperes
VGE - Volts
TJ = 125C
9 6 3 0
10 1 0.1 0.01
RG = 2.7W dV/dt < 6V/ns
0
50
100
150
200
250
0
100
200
300
400
500
600
700
Qg - nCoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
Diode
0.1
IGBT
0.01
Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
(c) 2000 IXYS All rights reserved
4-5
Eoff - millijoules
IXSN52N60AU1
Fig. 12 Forward current versus voltage drop.
Fig. 13 Recovery charge versus -diF/dt.
Fig. 14 Peak reverse current versus -diF/dt.
Fig. 15. Dynamic parameters versus junction temperature.
Fig. 16 Recovery time versus -diF/dt.
Fig. 17 Peak forward voltage vs. diF/dt.
Fig. 18 Transient thermal impedance junction to case.
(c) 2000 IXYS All rights reserved
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